smd type transistors 2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1 base 2 collector 3 emitter 2SD1815 features low collector-to-emitter saturation voltage. excllent linearity of h fe . high ft. fast switching time. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 120 v collector-emitter voltage v ceo 100 v emitter-base voltage v ebo 6v collector current i c 3a collector current (pulse) i cp 6a collector dissipation p c 1w jumction temperature t j 150 storage temperature t stg -55 to +150 smd type ic smd type transistors smd type smd type product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current i cbo v cb = 100v , i e =0 1 a emitter cutoff current i ebo v eb =4v,i c =0 1 a v ce =5v,i c = 0.5a 70 400 v ce =5v,i c =2a 40 gain bandwidth product f t v ce = 10v , i c = 0.5a 180 mhz output capacitance c ob v cb = 10v , f = 1mhz 25 pf collector-emitter saturation voltage v ce(sat) i c =1.5a,i b = 0.15a 150 400 mv base-to-emitter saturation voltage v be(sat) i c =1.5a,i b = 0.15a 0.9 1.2 v collector-to-base breakdown voltage v (br)cbo i c = 10a , i e = 0 120 v collector-to-emitter breakdown voltage v (br)ceo i c =1ma,r be = 100 v emitter-to-base breakdown voltage v (br)ebo i e = 10a , i c =0 6 v turn-on time t on 100 ns storage time t stg 900 ns fall time t f 50 ns dc current gain h fe h fe classification rank q r s t hfe 70 140 100 200 140 280 200 400 sales@twtysemi.com 2 of 2 http://www.twtysemi.com smd type transistors 2SD1815 smd type ic smd type transistors smd type smd type product specification 4008-318-123
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